Year-end Sale % OFF 
Abstract
Growth of the REBa2Cu3Oy (REBCO, RE = Y, Nd) crystals on the MgO substrates by the liquid phase epitaxy (LPE) process was investigated to clarify the growth mechanism. The crystal orientation of in-plane alignment was improved during the LPE process due to the preferential dissolution and growth even from a polycrystalline seed film. The orientation of preferential growth depended on the kind of RE for the REBCO system. The phenomena could be explained by the coarsening model by introducing the difference in the interfacial energies, which were considered not only general lattice matching but the Coulomb force at the interface between the REBCO and the MgO crystals. The preferential growth model was developed, and the calculation results showed a good agreement with the experimental results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
