Abstract
Preferential diffusion and the corresonding orientation effect was examined for GaAs Schottky barrier field-effect transistors. Unreported orientation effects of devices with no n+ implants are presented and compared to self-aligned n+-implanted devices. Characteristics of the intrinsic and extrinsic field-effect transistors were measured for devices oriented in the [011] and [011̄] directions. Enhanced diffusion due to anisotropic stress is proposed as the mechanism. Criteria for preferred device orientation and ambiguities in previous literature are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
