Abstract

AbstractThe present issue of physica status solidi (c) contains the papers presented at the 34th International Symposium on Compound Semiconductors (ISCS‐2007). The symposium was held in Kyoto, Japan, 15–18 October 2007. This conference was one of the annual series, which rotates between America, Europe and Asia. The last three conferences were held in Vancouver, Canada (2006), Rust, Germany (2005) and Seoul, Korea (2004).The symposium, whose history goes back to 1966 under the name “International Symposium on GaAs and Related Compounds” has a long standing tradition in science, technology, and applications of compound semiconductors. In this conference, 11 subcommittees (Growth and Nanostructure Formation; Transport Devices; Photonic Devices; Physics; Spintronics; Characterization, Nanoprobe and Nanomechanics; GaN and Related Semiconductors; Oxide Semiconductors; SiGe and Related Semiconductors; Carbon Related Materials; Organic Semiconductors and Other Soft Materials) cover the entire spectrum of III–V compound semiconductors as well as II–VI, SiGe, oxide semiconductors and carbon related materials.The symposium was attended by 550 registered participants from more than 25 countries all over the world. During the course of the symposium, 4 plenary talks, 27 invited papers, 7 late news papers as well as 295 contributed papers were given as oral or poster presentation. ISCS‐2007 highlighted emerging wide‐band gap and oxide semiconductor materials and devices as well as high‐speed electronics, next‐generation photonics and physics studies based on the traditional compound semiconductors.The symposium is also the venue for the attribution of three prestigious scientific awards, the Welker Award, the Quantum Device Award and the Young Scientist Award.The Proceedings contain many papers presented at the conference. The chapters are organized in a way that related papers are grouped by the subjects of the subcommittees.We would like to thank all the participants of ISCS‐2007 for contributing to the success of the symposium and acknowledge the diligent work of the committee members and referees of the manuscripts. We also thank Prof. Shizuo Fujita, Kyoto University, for the excellent local organization. Kyoto, the ancient capital of Japan with more than one thousand years of history, is full of beautiful temples, shrines, and gardens, giving us an ideal location to combine a scientific conference with motivating entertainment. Finally, we extend our thanks to Ms. Kaori Yoshida for her excellent secretary job for these proceedings.The 35th International Symposium on Compound Semiconductors, organized by Prof. Günter Weimann and Prof. Oliver Ambacher will be held at Euro‐Park, Rust near Freiburg, Germany, 21–24 September 2008.May 2008

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