Abstract
Samples of polyacrylonitrile (PAN) films and cobalt-containing PAN films have been fabricated by method of not coherent IR-radiation. It is constructed QSPR model, allowing to relate values of resistance of PAN films and Co-containing PAN films with parameters of technological process of formation of gas-sensing materials based on them. It is established that resistance of the obtained materials depends on temperature and time of the second stage of IR-pyrolize and on dopant concentration.
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Schedule a callMore From: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
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