Abstract

Thermal boundary resistance (TBR) is a key property for the thermal management of high power micro- and opto-electronic devices and for the development of high efficiency thermal barrier coatings and thermoelectric materials. Prediction of TBR is important for guiding the discovery of interfaces with very low or very high TBR. In this study, we report the prediction of TBR by the machine learning method. We trained machine learning models using the collected experimental TBR data as training data and materials properties that might affect TBR as descriptors. We found that the machine learning models have much better predictive accuracy than the commonly used acoustic mismatch model and diffuse mismatch model. Among the trained models, the Gaussian process regression and the support vector regression models have better predictive accuracy. Also, by comparing the prediction results using different descriptor sets, we found that the film thickness is an important descriptor in the prediction of TBR. These results indicate that machine learning is an accurate and cost-effective method for the prediction of TBR.

Highlights

  • Tailoring the thermal resistance of materials is vital for the thermal management of high power micro- and opto-electronic devices and for the development of high efficiency thermal barrier coatings and thermoelectric materials[1,2,3]

  • We have trained four models to predict Thermal boundary resistance (TBR), which correspond to the four machine learning algorithms described above

  • We first predict the TBR of all the interfaces using the acoustic mismatch model (AMM) and diffuse mismatch model (DMM)

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Summary

Introduction

Tailoring the thermal resistance of materials is vital for the thermal management of high power micro- and opto-electronic devices and for the development of high efficiency thermal barrier coatings and thermoelectric materials[1,2,3]. Heat in dielectric materials and semiconductors is transported predominantly by phonons, which undergo scattering in materials by interacting with defects, other phonons, boundaries, isotope, etc[4]. These processes cause the thermal resistance of the constituent materials. The assumptions of wave nature of phonon transport and specular scattering at the interface make the AMM valid when predicting TBR at low temperatures and at ideal interfaces. The transmission probabilities of phonons are determined by the mismatch of the phonon density of states (DOS) on each side of the interface Another crucial assumption made in the DMM is that phonons are elastically scattered: the transmitted phonons have the same frequencies with the incident phonons.

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