Prediction of the Interface Response Functions for Amorphous and Crystalline Phases of Silicon and Germanium

Abstract

AbstractInterface response functions that govern the solidification kinetics of amorphous and crystalline phases of Si and Ge have been determined for reparameterized versions of the Stillinger-Weber (SW) potential. The strength of the three-body term in the SW potential and the energy scaling parameter were modified to obtain agreement with the experimental melting temperatures of both the amorphous and crystalline phases. These modified models were used to produce predictions of the interface response function for both Si and Ge that adequately fit the few known experimental data.