Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering

Natalia Vetrova,Sergey Meshkov,Yury Ivanov,Evgeny Kuimov,Mstislav Makeev,Kirill Pchelintsev,Vasily Shashurin,P Yermolov

doi:10.1051/itmconf/20193008004

Natalia Vetrova, Sergey Meshkov + Show 6 more

Open Access

https://doi.org/10.1051/itmconf/20193008004

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Abstract

A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented. The developed computational algorithm is optimized by the criterion of temporal and spatial complexity. The relative deviation of the calculation results from the experimental data on the curvature of the initial portion of the current- voltage characteristic of the resonant tunnel diodes on AlGaAs- heterostructures is less than 3%.

Highlights

Nanoelectronics devices based on semiconductor A3B5 nanoscale heterostructures are of interest as the basis for ultrafast devices of the new generation [1, 2]
The task of predicting the current-voltage characteristics (CVC) of AlGaAsheterostructures arises both in the design of microwave devices based on them, and in evaluation of their reliability
The relative deviation of the calculation results from the experimental data on the curvature of the initial portion of the currentvoltage characteristic of the resonant tunnel diodes on AlGaAsheterostructures is less than 3%

Summary

Introduction

Nanoelectronics devices based on semiconductor A3B5 nanoscale heterostructures are of interest as the basis for ultrafast devices of the new generation [1, 2]. Research results [3,4] show that such devices have the potential for applications in industries with high reliability requirements. The task of predicting the current-voltage characteristics (CVC) of AlGaAsheterostructures arises both in the design of microwave devices based on them, and in evaluation of their reliability. To increase the accuracy of the calculation in the model of current transfer, the inclusion of such processes as inter-valley dispersion and Coulomb interaction of electrons is included. The algorithms of such models are characterized by high temporal complexity and need to be refined to analyze structures subject to degradation changes

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