Prediction of Spatial Patterns of Oxygen Precipitation in Silicon

Abstract

This work demonstrates a correlation between the initial resistivity pattern and the final precipitation pattern in silicon wafers. The correlation allows prediction of the final precipitation pattern by measuring of the initial resistivity pattern prior to any thermal donor annihilation by thermal processing. By using a simple change in the form of the thermal cycle, this precipitation pattern can be forced into a positive or negative image of the initial resistivity pattern. Time domain reflectometry and cathodic hydrogen generation (“bubble test”) are two nondestructive methods used to characterize the state of the electrically active donor complexes; both methods are described here.