Prediction of RF performances of advanced MOS transistors from DC and low frequency measurements

Abstract

AbstractThis work presents a new method to easily and rapidly extract RF figures of merit of MOSFET transistors. Using DC and low frequency measurements, the extrinsic resistances (Rg, Rs, Rd), the intrinsic conductances (gm, gd), and the input capacitance Cgg have been extracted. The evaluation of these parameters has enabled to compute 2 RF figures of merit (FoM), namely, the current gain cutoff frequency fT and the maximum oscillation frequency fmax. It has been shown that both the proposed method and the conventional RF extraction technique give quite close values.