Prediction of radiation degradation of Si detectors irradiated by relativistic ions of different masses

Abstract

The presented paper is focused around radiation damage of silicon material under the different ions irradiation. The ion total energy range is 0.7 GeV for 7Li to 208 GeV for 208Pb. The results of TRIM modeling for the set of six ions are presented. The extracted information about vacancy production allows making first assumptions of the Si degradation dependence on mass and energy of the incident ion.