Abstract

The radar absorbing material (RAM) containing a tetrapod-needle zinc oxide whisker (T-ZnOw) has been proved to have good efficiency of microwave absorption. However, the available theoretical models, which are intended to predict the microwave absorbing properties of such an interesting composite, still cannot work well without some prior knowledge, like the measured effective electromagnetic parameters of the prepared T-ZnOw composite. Hence, we propose a novel predictive method here to calculate the reflectivity of T-ZnOw RAM without prior knowledge. In this method, the absorbing ability of this kind of material is divided into three main aspects: the unstructured background, the conductive network, and the nanostructured particle. Then, the attenuation properties of these three parts are represented, respectively, by three different approaches: the equivalent spherical particle and the static strong fluctuation theory, the equivalent circuit model obtained from the complex impedance spectra technology, and the combination of four different microscopic electromagnetic responses. The operational calculation scheme can be obtained by integrating these three absorption effects into the existing theoretical attenuation model. The reasonable agreement between the theoretical and experimental data of a T-ZnON/SiO2 composite in the range of 8–14 GHz shows that the proposed scheme can predict the microwave absorption properties of the T-ZnOw RAM. Furthermore, a detailed analysis of these three mechanisms indicates that, on the one hand, the background plays a dominant role in determining the real part of the effective permittivity of the T-ZnOw composite while the network and the particle are the decisive factors of its material loss; on the other hand, an zero-phase impedance, i.e., a pure resistance, with appropriate resonance characteristic might be a rational physical description of the attenuation property of the conductive network, but it is difficult to realize such an impedance property by the traditional resistance and capacitance network. As a result, a series resonant circuit with a relatively low quality factor is introduced to approximate the material loss caused by the network. Finally, the different combinations of these three absorbing mechanisms are analyzed to further display their roles in the overall absorbing performance.

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