Abstract
The optical absorption strength of acceptors in semiconductors is calculated in the effective-mass approximation. The spherical-model description of acceptor states explains the main features of the experimental IR spectra. In particular, the strong intensity of the D and C lines ( 2P 5 2 final states) relative to that of the G line ( 2P 3 2 final state) results from the presence of a d-like component in the acceptor ground state. The line intensities in Si and Ge are also calculated beyond the spherical model including valence-band warping, coupling to the split-off valence band and q-dependent screening. The results reproduce well available experimental data and provide usefull additional information for the interpretation of those data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
