Abstract
This paper presents a single event burnout (SEB) sensitivity characterization for power MOSFETs, independent from tests, through a prediction model issued from TCAD analysis and the knowledge of device topology. The methodology is applied to a STRIPFET device and compared to proton data obtained at PSI, showing a good agreement in the order of magnitude of proton SEB cross section, and thus validating the prediction model as an alternative device characterization with respect to SEB.
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