Abstract
Investigating dynamic resistance switching behaviors is important for real applications for resistance random access memory (RRAM). In this study, we demonstrate a voltage induced positive-feedback effect which occurs during the reset process under specific conditions, and propose an explanatory mechanism. Since instantaneous change of current always appears with the self-compliance characteristic, research was carried out to clarify the mechanism. We found that the cause is a positive-feedback effect which induces a sudden change in the voltage allocation to the RRAM. A mathematical proof was also carried out to confirm this mechanism, and was used to predict reset behavior when under a specific condition. These experimental and simulation results can help provide a better understanding of the RRAM dynamic reset mechanism.
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