Abstract
The objective of the analysis is to demonstrate how the Boltzmann-Arrhenius-Zhurkov (BAZ) model, originally suggested by Zhurkov in the kinetic concept of the strength of solids as a generalization of the Arrhenius theory of chemical reactions, can be effectively employed for the prediction of the lifetime of electronic materials experiencing ionizing radiation.
Highlights
The objective of the analysis is to demonstrate how the Boltzmann-Arrhenius-Zhurkov (BAZ) model, originally suggested by Zhurkov in the kinetic concept of the strength of solids as a generalization of the Arrhenius theory of chemical reactions, can be effectively employed for the prediction of the lifetime of electronic materials experiencing ionizing radiation
The multi-parametric BAZ model extends the original Zhurkov model for the situations, when the stressor is not tensile mechanical stress, but any other stimulus that contributes to the degradation of the material or the device and, since the superposition principle does not work in the reliability engineering, - for the situations, when multiple stressors are applied
In this equation τ0 is the time constant, U0, eV, is the basic activation energy that characterizes the propensity of the material or the device to the action of the ionizing radiation, T,0 K is the absolute temperature, k = 8.61733x10-5 eV/K is Boltzmann’s constant, D, Gy = J/kg, is radiation and γR is the sensitivity factor for the case of radiation “stressor”
Summary
The objective of the analysis is to demonstrate how the Boltzmann-Arrhenius-Zhurkov (BAZ) model, originally suggested by Zhurkov in the kinetic concept of the strength of solids as a generalization of the Arrhenius theory of chemical reactions, can be effectively employed for the prediction of the lifetime of electronic materials experiencing ionizing radiation. BAZ equation for the mean-time-to-failure (MTTF) can be written for the case, when the external loading is ionizing radiation, as follows: τ
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