Abstract
Alloys of Ge and Sn grown on Si platform show about tenfold increase in absorption over Ge at L-band due to direct nature of the band gap. We have made use of it by designing a Ge/GeSn/GeSn heterophototransistor on Si. A thermionic-field-diffusion model is employed to calculate the current, optical gain and responsivity. The values are comparable with those for InP/InGaAs/InGaAs Npn devices.
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