Precursors for p‐Type Nickel Oxide: Atmospheric‐Pressure Metal–Organic Chemical‐Vapour Deposition (MOCVD) of Nickel Oxide Thin Films with High Work Functions

Abstract

A series of unsymmetrical nickel β‐diketonate derivatives have been synthesised and structurally characterised for application as atmospheric‐pressure metal–organic chemical vapour deposition (AP‐MOCVD) precursors for nickel oxide. (TMEDA)Ni[MeC(O)CHC(O)OEt]2 (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)‐coated glass; the work function of the ITO was raised as a consequence.