Precursor mutual interactions in the kinetics of MOCVD of SBT films

Abstract

This paper reports on deposition kinetics of SrBi 2Ta 2O 9 (SBT) films grown with Sr(hfac) 2tetraglyme (H-hfac=1,1,1,5,5,5-hexafluoroacetylacetone), Ta(OC 2H 5) 5 and Bi(C 6H 5) 3 precursors. The kinetics of MOCVD of SBT has been compared to the kinetics of single component films, to obtain information about mutual interactions among precursors. Deposition rate of SrF 2 from Sr(hfac) 2tetraglyme is determined by surface reactions below 350°C, whereas its mass transport limited above this temperature. For the other two precursors, the deposition processes involve surface reactions in the overall investigated temperature range (200–550°C). With respect to the multi-component process, it has been found that the deposition kinetics of Sr(hfa) 2tetraglyme is not significantly affected by the presence of the other two precursors. In contrast, close relations have been observed between Bi and Ta precursors, since a direct dependence between relative growth rates has been found.