Abstract
The spray pyrolysis method is employed to deposit ZnO films at different precursor molarity (SC). The X-ray diffraction study reveals the polycrystalline film growth along [0 0 2], c-axis direction. The SC dependent variations of microstructural parameters are considered to propose the film’s growth mechanism. The growth rate increases with SC due to the rising number of Zn species till SC = 0.5 M, above which it slightly decreases due to oxygen insufficiency. The rise in SC causes film thickness and crystallite size to increase, whereas bandgap energy decreases from 3.35eV to 3.22eV. At optimized SC = 0.3 M, the film shows 96.3% transmittance with maximum electrical conductivity (93.9 Ω-1-cm−1), carrier concentration (4.94 × 1019/cm3) and mobility (11.9 cm−2V−1s−1). The maximum figure of merit (1.76 × 10−3 Ω−1) with the least sheet resistance (388 Ω/□) is recorded for films deposited at SC = 0.3 M.
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