Precursor engineering enables high-performance all-inorganic CsPbIBr2 perovskite solar cells with a record efficiency approaching 13%

Abstract

All-inorganic CsPbIBr2 perovskite has attracted widespread attention in photovoltaic and other optoelectronic devices because of its superior thermal stability. However, the deposition of high-quality solution-processed CsPbIBr2 perovskite films with large thicknesses remains challenging. Here, we develop a triple-component precursor (TCP) by employing lead bromide, lead iodide, and cesium bromide, to replace the most commonly used double-component precursor (DCP) consisting of lead bromide and cesium iodide. Remarkably, the TCP system significantly increases the solution concentration to 1.3 M, leading to a larger film thickness (∼390 nm) and enhanced light absorption. The resultant CsPbIBr2 films were evaluated in planar n-i-p structured solar cells, which exhibit a considerably higher optimal photocurrent density of 11.50 mA cm−2 in comparison to that of DCP-based devices (10.69 mA cm−2). By adopting an organic surface passivator, the maximum device efficiency using TCP is further boosted to a record efficiency of 12.8% for CsPbIBr2 perovskite solar cells.