Abstract

Experimental observations were conducted to investigate the effects of various parameters on the surface finish and SubSurface Damage (SSD) of ground silicon wafers. A novel design in wet chemical etching was proposed and implemented to provide wafers a means of strength enhancement while allowing the user to control the backside wafer surface finish. The results indicate that no propagating crystalline defect was accompanied, but leaving the wafer in a rather good surface integrity for back metal adhesion purposes.

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