Abstract
Abstract A Ni temperature sensor for in situ precision measurement of the substrate surface temperature during laser-induced chemical vapor deposition (LICVD) of a-Si: H from SiH 4 has been developed. The substrate surface temperature was determined with an accuracy of ± 1°C, and even the effect of indirect heating from the laser beam was observed. Infrared spectra and conductivities of deposited films were studied. The mechanism of LICVD is discussed.
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