Abstract
The developed model of a resistive-transistor thermoelectric converter, the technique for identifying its parameters and the results of circuit simulation using the proposed model of an RMS-DC converter are considered. The electrical circuit of the RMS-DC converter is given, the dependences of the conversion error on the input voltage level obtained by circuit modeling, on the basis of which the main requirements for reducing the error are formulated. The application of operational amplifiers of the OAmp11.2 type with input junction field-effect transistors, previously developed on the master slice array МН2ХА031, makes it possible to implement a precision RMS-DC converter in the form of a microassembly containing two crystals of the ПН001 thermoelectric converter, one МН2ХА031 crystal with a signal processing circuit and external filter capacitors. Circuit simulation showed that such a converter remains operational at an absorbed dose of gamma radiation equal to 1 Mrad and exposure to a neutron fluence of 1 ⋅ 1013 n/cm2 .
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