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Abstract
This paper examines the process issues of integrating a precision resistor feature into an existing salicided complementary metal oxide semiconductor technology. The resistor features are created by selectively blocking salicide formation with a thin nitride layer that must be compatible with the existing device and salicide processes. The integrity of the blocking layer during the HF‐based salicide preclean is of special concern. Methods to monitor and control the properties of the thin nitride blocking layer have been developed. © 2000 The Electrochemical Society. All rights reserved.
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