Abstract
We have demonstrated significant advances in the production of aspheric optics for extreme ultraviolet lithography. An optic has been fabricated with an aspheric departure of 1.5 {mu}m, a figure error of 0.7 nm rms and a nanoroughness of 0.25 nm rms. Further improvements are required in the figure and nanoroughness to reach high throughput and near diffraction limited performance in an EUVL system. 8 refs., 2 figs.
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