Precision Grinding of Reaction Bonded Silicon Carbide Using Coarse Grain Size Diamond Wheels

Abstract

Reaction bonded SiC(RBSiC) is attractive for optical application because of its favorable properties and low fabrication cost. However, the difficultness and cost involved in RBSiC grinding limit its application. The investigation on high efficient and low-cost machining with good grinding quality is desired. Generally, high efficient machining for RBSiC is realized by using coarse grain size grinding wheels, but serious grinding damage is inevitable. In this paper, monolayer nickel electroplated coarse grain size diamond grinding wheels with grain sizes of 46 μm, 91 μm, and 151 μm were applied to the grinding of RBSiC. An electrolytic in-process dressing(ELID) assisted conditioning technique was first developed by using cup shape copper bonded conditioning wheels with grain sizes of 15 μm and 91 μm to generate the conditioned coarse grain size wheels with minimized wheel run-out error within 2 μm, constant wheel peripheral envelop as well as top-flattened diamond grains. Then, the grinding experiments on RBSiC were carried out to investigate the grinding performance and material removal mechanism. The experimental results indicate that the developed conditioning technique is applicable and feasible to condition the coarse grain size diamond wheels under optimal conditioning parameters, and the material removal mechanism involved in RBSiC grinding is the combination of brittle fracture and ductile deformation to generate smooth ground surface. This research is significant for the high efficient and low-cost precision grinding of RBSiC with good ground surface quality.