Abstract
A method for improving SIMS depth profiling by recording secondary molecular ions is proposed. Experimental studies of SiGe and AlGaAs nanometer-scale test structures, and of boron-doped Si with an energy of 5 keV showed improved secondary-ion mass spectroscopy depth resolution when recording secondary molecular ions. A physical model that considers the molecular ion dissociation energy to be a decisive parameter is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have