Abstract
Abstract Heterojunctions can be combined together in a device to form heterostructures used in high-speed- and opto-electronics. By using electrochemical polymerization approach, a heterojunction polymer memory device with a configuration of Al/PTDI/PBTP/ITO, in which poly(7H-[1,2,5]thiadiazolo [3,4-e]isoindole)(PTDI) was used as electron-withdrawing layer, while poly(2H-benzo[4,5]thieno[2,3-c]pyrrole) (PBTP) as electron-donating layer, has been successfully manufactured. A clear indication of the deposition of the polymer film on the electrode surface lies in the expansion of the sweeping voltage window, which can be defined as the difference in voltage between the anodic and cathodic waves (Δ∣Vanodic wave -Vcathodic wave∣), with increasing the number of sweeping cycles. The as-prepared device exhibits very good nonvolatile rewritable memory performance, with a small turn-on voltage of −0.75 V and an ON/OFF current ratio of 2 × 104.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
