Abstract

The low yield of indium-tin-oxide (ITO) usually persists throughout the processes of semiconductor production. By establishing a recycle process for ultra-precise etching of the ITO thin-film, the semiconductor industry can effectively recycle defective products, thereby reducing both production costs and pollution. This study presents a new nanotechnology application of recycle process of ITO etching using a rectangle cathode tool that offers a fast etching rate from color filter surface of TFT-LCD. In the current experiment, the design features of the etching process for a thin-film nanostructure of ITO are of major interest. Low thickness of the rectangle cathode, adequate gap-width between the cathode and the workpiece, large flow rate of the electrolyte, or high working temperature corresponds to high etching rate for ITO thin-film. An effective rectangle cathode tool and low-cost recycle processes using the electrochemical etching need little time to enable easy and clean ITO thin-film nanostructure etching.

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