Precise quantification of the adhesion between metallic thin films and silicon wafer

Abstract

The performance and reliability of integrated circuits depend on the mechanical and electrical properties of the interfaces between thin films and the silicon wafer. One of the essential properties of the interface is its adhesion energy. However, conventional adhesion characterization methods could be further improved, especially in providing repeatable and reliable measurements. In this paper, we measured the adhesive strength of the interface between tungsten thin films and silicon wafers in micro-sized specimens using a direct push-to-pull device built into a nano-indenter. A scratch method with a transparent theoretical model was applied to quantify the same interfaces' adhesive strength, adhesion energy, and fracture resistance. Microscopic and mechanical analysis clarified the physical origin of thin film delamination. The current method precisely quantified the interfaces' adhesive strength and fracture resistance. This method is promising for sub-micron thin film designs in the semiconductor industry with its superior repeatability, reliability, and ease of operation.