Precise modeling of hot carrier gate current in short-channel MOSFET's

Abstract

A powerful model which considers the fact that the values of the channel and carrier temperatures T and T/sub c/ vary with position in the bulk and channel is considered. It reveals that the energy distribution of hot carriers deviates from the well-known Maxwellian distribution by a small but nonnegligible perturbation and evaluates the dependence of this deviation of the device technology, geometry, and biasing conditions. The model helps to remove important discrepancies between the old hot-carrier models and measurements. >