Abstract
AbstractThe dependence of g‐factor of free electrons in n‐InSb on magnetic field and concentration is investigated by the spin‐flip Raman scattering gain method (SFRS method). The correct values of g‐factor at the conduction band edge g0 = −51.55 ± 0.02 and dg/dH (H ∥︁ [100]) = (2.06 ± ± 0.02) (I/T) are obtained by extrapolation of these values to zero field and concentration. The value of g0 agrees well with the data obtained by electron spin resonance (ESR) method (g0 = = −51.53). The g‐factor anisotropy coefficient γ = (0.095 ± 0.004) (1/T) is measured at H = = 0.9434 T. The values m*/m0 = 0.0135 ± 0.0001, EP = (24.55 ± 0.2) eV, EQ = (17.8 ± 1) eV, E'P = (6.0 ± 3.8) eV, F = −2.0 ± 0.4 and N1 = −0.04 ± 0.03 are obtained by using the parameters: Δ = (0.803 ± 0.005) eV and Eg = (0.2368 ± 0.0002) eV.
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