Abstract
Transition metal dichalcogenides (TMDCs) demonstrate great potential in numerous applications. However, these applications require a precise control of layer thickness at the atomic scale. In this work, we present an in-situ study of the self-limiting oxidation process in MoTe2 by ozone (O3) treatment. A precise layer-by-layer control of MoTe2 flakes can be achieved via multiple cycles of oxidation and wet etching. The thinned MoTe2 flakes exhibit comparable optical properties and film quality to the pristine exfoliated ones. Besides, an additional p-type doping is observed after O3 oxidation. Such a p-doping effect converts the device properties of MoTe2 from electron-dominated to hole-dominated ambipolar characteristics.
Highlights
The past decade has witnessed a rapid development in two-dimensional (2D) materials research with a focus on the family of transition metal dichalcogenides (TMDCs) [1,2,3]
Depending on polytype and the number of transition metal d-electrons, TMDC materials exhibit a wide range of electronic properties, from semiconducting, metallic, to superconducting [1]
Two-dimensional materials like MoS2, MoSe2, and their tungsten analogs, with their indirect bandgap transformed to direct in the monolayer limit [4,5,6], could be used as promising candidates for applications in electronics and optoelectronics [7,8,9]
Summary
The past decade has witnessed a rapid development in two-dimensional (2D) materials research with a focus on the family of transition metal dichalcogenides (TMDCs) [1,2,3]. Depending on polytype and the number of transition metal d-electrons, TMDC materials exhibit a wide range of electronic properties, from semiconducting, metallic, to superconducting [1]. Because its bandgap is comparable to that of silicon, MoTe2 can potentially expand the range of TMDC optoelectronic applications beyond the visible spectrum. The narrow bandgap of MoTe2 facilitates the construction of n- and p-type transistors due to low Schottky barrier heights (SBHs) for electrons and holes [13].
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