Abstract
Precise transient temperature measurement is fundamental to estimate lifetime of power modules, especially those made with SiC transistors having very low thermal capacitance. This paper shows a precise method to estimate dynamic temperature of SiC components composing a power module used in three-phase inverters. This method is based on the use of a fast thermal camera to precisely measure thermal impedance of each die. Results of thermal camera measurements are validated by comparison with classical on-state resistance measurements to estimate junction temperature. Thermal impedance model is then coupled with precise loss calculation in order to predict dynamic die temperature during operation in a three-phase inverter. Measurements of the temperature variation of SiC dies conducting typical currents of a 540 V/7.5 kW three-phase inverter for aeronautical applications show the accuracy of the developed model for dynamic junction temperature estimation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
