Abstract
Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.
Highlights
Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics
We report the precise control of interlayer twist angle in large-scale stacked multilayer MoS2 homostructures by the combination of as-fabricated epitaxially grown oriented MoS2 monolayer and water-assisted transfer technique
Considering that twisted bilayer MoS2 shows a variety of fantastic physical properties, such as ultra-flatbands, shear solitons, time-reversal-invariant topological insulators, Moiré quantum well states and correlated Hubbard model physics[24,25,26,27], our work is of great significance in guiding the applications of twistronics based on large-scale 2D materials
Summary
Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. We report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. Twist angle governs the crystal symmetry and can lead to a variety of interesting physical behaviors, such as Hofstadter’s spectra[2,3], unconventional superconductivity[4,5], moiré excitons[6,7,8], tunneling conductance[9,10], nonlinear optics[11,12], and structural super-lubricity[13,14] These initiate the age of twistronics for various electronic and photonic applications. We report the precise control of interlayer twist angle in large-scale stacked multilayer MoS2 homostructures by the combination of as-fabricated epitaxially grown oriented MoS2 monolayer and water-assisted transfer technique. Considering that twisted bilayer MoS2 shows a variety of fantastic physical properties, such as ultra-flatbands, shear solitons, time-reversal-invariant topological insulators, Moiré quantum well states and correlated Hubbard model physics[24,25,26,27], our work is of great significance in guiding the applications of twistronics based on large-scale 2D materials
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