Abstract
In this paper, a holistic methodology for the dummy poly silicon height control is discussed, including within shot, within wafer, and wafer to wafer in IC mass production. With a certain process and integration control, the poly-silicon height can be precisely controlled, which is beneficial to the final metal gate height. The poly-silicon height can achieve a less than 2% variation within wafer. The variation of device and yield performance is hence much improved.
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