Abstract
A novel method of vapor-liquid-solid (VLS) growth has been developed in which silicon VLS crystals are grown on mesa-shaped silicon projections covered with a gold “hat” on the upper surface. The mesa is fashioned on a silicon wafer by etching of the wafer surface. This “mesa method” allows the growth of fine silicon crystal rods at predetermined positions with micrometer accuracy, and yields rods of over 500 μm in length and under 20 μm in diameter without creating fused, kinked, or satellite rods.
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