Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride

Abstract

Experimental results presented in this contribution demonstrate that adding HCl to the SiC CVD process is not only an efficient way to suppress the Aluminum memory effect but may also be considered as a powerful tool for fine tuning of intentional Al incorporation in 3C-SiC and 4H-SiC thin films. The approach is easy to implement and seems more reliable than changing TMA bubbling/dilution parameters during the growth. An ad-hoc phenomenological model is proposed to explain the correlation between the HCl supply and Al incorporation.