Abstract
Si/graded-Si1-xGex/Si1-xGexheterostructures were grown by reduced pressure chemical vapor deposition on Si (100)&(111) substrates at different temperatures, and their structural properties were investigated using spectroscopic ellipsmetry and secondary ion mass spectroscopy. The variation of growth temperature was observed to alter each part of Si/graded-Si1- xGex/Si1-xGexheterostructure growth, and the changes could be clearly addressed according to the evolutions of ellipsometry spectra. As an in line monitoring tool, the spectroscopic ellipsometry presented excellent capability of accuracy ranging ± 1.2ºC in substrate temperature and correspondingly <5% in current gain for heterojunction bipolar transistor with the Si/graded-Si1-xGex/Si1-xGex base epi layers.
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