Abstract
The precipitation of oxygen in silicon has been studied in the temperature range 650°C to 1050°C using the techniques of chemical etching, optical scattering, cold neutron scattering and IR absorption applied to the 9μm band at 4.2K. Our particle densities measured after long heating times were fitted by an empirical relationship N = 0.15exp (2.65eV/kT) (cm-3) leading to particle radii given by r0 = 0.01exp (-0.8eV/ kT) cm. The data were fitted to Ham's kinetic theory from which we obtained the diffusion coefficient D = 0.02exp (-2.42eV/kT) cm2 sec-1. The heat of solution of oxygen is estimated to be 1.4 ± 0.2eV.
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