Abstract
Precipitation behaviors of Cu and Ni on Frank-type partial dislocations in Czochralski-grown silicon are investigated. It is found that Cu develops precipitate colonies in the region away from Frank partials and does not decorate Frank partials when the specimens are cooled slowly, while Ni decorates them although the concentration of Ni is lower than that of Cu in the specimens. The results indicate that Ni impurity is easier to decorate Frank partials than Cu impurity in Si.
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