Abstract
Size, morphology and distribution of precipitates caused by Zn diffusion in GaAs were studied using transmission electron microscopy to determine the effects of diffusion temperature, time, source, starting material and quenching rate. Precipitates are tetrakaidecahedra (14 sides) and do not exceed O.lµ in diameter. Diffusion temperature has the most noticeable effect on precipitate size and distribution. Results indicate that an internal reaction is occurring between Zn and an unknown impurity (or impurities) in the GaAs.
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