Abstract
Electrical properties of Σ25 grain boundaries in silicon were studied by capacitance spectroscopy and electron beam induced currents (EBIC) measurements. After a high temperature annealing followed by a fast cooling, activated centers appear. Energy levels are sensitive to the heating speed. Transmission electron microscopy (TEM) reveals that electrical behavior is correlated with the formation of precipitates in colonies at the interface. They contain copper present in the crystals prior to the heat processing and they are thought to be metal silicides. They are spherical, 50–500 Å in size. Their crystal lattice was determined by analysis of the extra spots after elimination of multiple scattering and corresponds to a CuSi phase not stable at room temperature.
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