Abstract
Etching experiments reveal new insights into the character of the complex interaction of structural defects and precipitates in a ribbon grown solar silicon material (RGS). Crystal defects are densely decorated with precipitates which cannot be dissolved by the etch. The etched out chains of precipitates represent their situation in the Si wafer before being etched. SEM combined with EDX are suitable means to investigate these defects. Besides the dislocations and dislocation networks in grain boundaries marked by precipitates (EDX: Si + O + C), dendrites were found which may affect the electrical properties of a solar cell. At both as-grown surfaces SiC crystallites are built in, which do not activate dislocation sources and so do not increase the dislocation density in the wafer.
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