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Abstract
The effect of intermediate temperature annealing on the carbon-doped base region of InGaP/GaAs heterojunction bipolar transistors (HBTs) was studied. This work shows that after annealing at only 600 °C a sample doped at 5.5×1019 cm−3 displays carbon precipitation. InGaP/GaAs HBT structures were grown for the annealing study. Hall measurements were used to measure hole concentration. Atomic force microscopy was employed to identify carbon precipitation. The annealing process not only removes hydrogen from the base but also creates carbon precipitates. The dc current gain measurements imply that the carbon precipitates increase base recombination. These results are very important in the growth and postgrowth annealing of high gain HBTs.
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