Abstract
Because of extreme differences between the mechanical properties of Si3N4, and SiO2 usual means of specimen preparation pose severe difficulties every step of the way in the XTEM of oxidized silicon nitride. Perhaps that explains the lack of TEM investigation of the report that the Si3N4/SiO2 interface is duplex. This paper highlights some of the problems encountered in that system, and the remedies employed.The problems begin with abrasive preparation. While lapping on wheelbonded diamond removes material uniformly, diamond paste polishing does not: the fine particles lodge in the boundary of interest and destroy the oxide. Next comes dimpling. Its load focuses at a point over/near the boundary and crushes the fragile oxide. Fig. 1 shows a dimple that was aborted at 10μm depth on a foil 90μm thick. Load was 10 gm. Though offset from the boundary, the dimpling still crushed adjoining oxide.
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