Abstract
Ultrathin SiO2 films (3-6 nm) have beenelectrically characterized with a conductive atomic forcemicroscope. This technique allows the electricalcharacterization of areas of ~100 nm2, whichare comparable to the area of breakdown spots. Sequences ofvoltage ramps on fixed oxide locations have been applied toinduce the oxide degradation and its conduction properties havebeen analysed within the nanometre scale range. In particular, on-offfluctuations before and after breakdown are reported on singlebreakdown spots.
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