Abstract
Sr-deficient and praseodymium-substituted SrBi2Ta2O9 (SPrBT) films with a saturated remanent polarization of as low as 1 V were prepared on Pt/Ti/SiO2/Si structures using the sol-gel method. The maximum remanent polarization (Pr) value of the SPrBT films was obtained using a Sr0.8Pr0.13Bi2Ta2O9 precursor solution. The Pr and coercive field saturation values of a 123-nm-thick SPrBT film annealed at 850°C were 7.8 µC/cm2 and 37 kV/cm, respectively, and a high Pr value of 6.7 µC/cm2 was obtained at an applied voltage of 1 V. The SPrBT films showed only a 2% fatigue after a polarization switching of 5 ×109 cycles, which is similar to that of Sr-deficient and Bi-excess SrBi2Ta2O9 films.
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