Abstract
Capping an indium–tin–oxide anode with a thin layer of praseodymium oxide (Pr2O3) has been found to enhance not only hole-injection, quantum, and power efficiencies but also the lifetime of organic light-emitting diode made using copper (II) phthalocyanine as the anode buffer layer, N, N′-diphenyl-N,N′ bis(3-methylphenyl-1,1′-biphenyl-4,4′-diamine as the hole-transport layer and tris-8-hydroxyquinoline aluminum as the electron-transport/emission layer. The best results have been obtained on diodes with ∼1 nm thick Pr2O3. A possible mechanism behind the improvement is discussed.
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