Abstract

Silicon fascinates with incredibly high theoretical energy density as an anode material and considered as a primary candidate to replace well-established graphite. However, further commercialization is hindered by the abnormal volume changes of Si in every single cycle. Silicon embedded in a buffer matrix using the melt-spinning process is a promising approach; however, its metastable nature significantly reduces the microstructure homogeneity, the quality of the composition, and, therefore, the electrochemical performances. Herein, we developed a new approach to design a high-performance Si-alloy with improved microstructure uniformity and electrochemical properties. Namely, annealing at a certain temperature of the melt-spun amorphous alloy ribbon allowed us to evenly distribute Si nanocrystallites in the microstructure with control of average grain size. As a result, the Si-alloy electrode delivers an initial discharge capacity of 900 mAh g-1 and exhibits a high coulombic efficiency of >99% from the second cycle with a capacity retention of ∼98% after 100 cycles. This study provides powerful insights and evidence for the successful application of the proposed approach for commercial purposes.

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